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Pb(Zr,Ti)O3 Based Thin Film Ferroelectric Nonvolatile Memories

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Book cover Thin Film Ferroelectric Materials and Devices

Part of the book series: Electronic Materials: Science and Technology ((EMST,volume 3))

Abstract

Ferroelectric thin film semiconductor memories have the potential to dominate world memory markets. Technical developments in the next five years will determine whether ferroelectric thin film memory technology will be the basis of an annual $30 billion market or will be relegated to only niche market status. Among the technologies that ferroelectric random access memories (FERAMs) could replace are electrically erasable programmable read only memories (EEPROMs), Flash nonvolatile memories (FLASH), and dynamic random access memories (DRAMs). Ferroelectric thin film nonvolatile memory technology will be emphasized in this chapter. FERAMs offer advantages of fast write speeds, high endurance and low operating voltage compared to EEPROMs and FLASH technologies. Present FERAM write speeds are approximately two orders of magnitude faster than FLASH and four orders of magnitude faster than EEPROMs. Further, operating voltages are less than 5 volts for FERAMs compared to 12 volt operation for FLASH and EEPROMs. Present FERAM technologies based on Pb(Zr,Ti)O3 (PZT) with oxide electrodes or SrBi2Ta2O9 (SBT) with Pt electrodes provide in excess of 1013 read/write cycles.

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Authors and Affiliations

  1. Sandia National Laboratories, Albuquerque, NM, 87185, USA

    B. A. Tuttle

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  1. B. A. Tuttle
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Editor information

Editors and Affiliations

  1. University of Maryland at College Park, USA

    R. Ramesh

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© 1997 Springer Science+Business Media New York

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Tuttle, B.A. (1997). Pb(Zr,Ti)O3 Based Thin Film Ferroelectric Nonvolatile Memories. In: Ramesh, R. (eds) Thin Film Ferroelectric Materials and Devices. Electronic Materials: Science and Technology, vol 3. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-6185-9_6

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  • DOI: https://doi.org/10.1007/978-1-4615-6185-9_6

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-9993-3

  • Online ISBN: 978-1-4615-6185-9

  • eBook Packages: Springer Book Archive

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