Skip to main content

Single Event Phenomena II

  • Chapter
Single Event Phenomena

Abstract

This chapter continues the discussion of the other important facets of single event phenomena. It begins with multiple event effects where one incident single event upset (SEU)-inducing ion can produce more than one bit upset in the same memory array, for example. Following the above is a discussion of the effects of a device exposed to an ionizing dose of radiation prior to and/or during the occurrence of an SEU. The ionizing dose is usually construed, but not exclusively, as that from gamma rays, X-rays, protons, or electrons, corresponding to the particular hostile or benign environment in which the device finds itself.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 249.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. L.D. Edmonds, “A Distribution Function for Double Bit Upsets,” EEE Trans. Nucl. Sci. NS-36 (2), 1344–1346 (1989).

    Article  Google Scholar 

  2. N.M. Ghoneim, R.G. Marten, J.S. Cable, and Y. Song, “The Size Effect of an Ion Charge Track on Single Event Multiple Bit Upset,” IEEE Trans. Nucl. Sci. NS-34 (6), 1305–1309 (1987).

    Google Scholar 

  3. G.C. Messenger, “Collection of Charge on Junction Nodes From Ion Tracks,” IEEE Trans. Nucl. Sci. NS-29 (6), 2024–2031 (1982).

    Article  Google Scholar 

  4. J. Bradford, “Non-Equilibrium Radiation Effects in VLSI,” IEEE Trans. Nucl. Sci. NS-25 (5) (1978).

    Google Scholar 

  5. H.L. Grubin, J.P. Kreskovsky, and B.C. Weinberg, “Numerical Studies of Charge Collection and Funneling in Silicon Devices,” IEEE Trans. Nucl. Sci. NS-31 (6), 1161–1166 (1984).

    Article  Google Scholar 

  6. J.A. Zoutendyk, L.S. Smith, and G.A. Soli, “Empirical Modeling of Single Event Upset (SEU) in NMOS Depletion Mode Load SRAM Chips,” IEEE Trans. Nucl. Sci. NS-33 (6), 1581–1585 (1986); J.A. Zoutendyk, H.R. Schwartz, and L.R. Nevill IEEE Trans. Nucl. Sci. NS-35 (6), 1644–1647 (1988).

    Google Scholar 

  7. R. Koga, W.A. Kolasinski, J.V. Osborn, J.H. Elder, and R. Chitty, “SEU Test Techniques for 256K Static RAMs and Comparison of Upsets Induced by Heavy Ions and Protons,” IEEE Trans. Nucl. Sci. NS-35 (6), 1638–1643 (1988).

    Article  Google Scholar 

  8. Y. Song, K.N. Vu, J.S. Cable, A.A. Witteles, W.A. Kolasinski, R. Koga, J.H. Elder, J.V. Osborn, R.G. Martin, and N.M. Ghoneim, “Experimental and Analytical Investigation of Single Event Multiple Bit Upsets in Polysilicon Load 64K X 1 NMOS SRAMs,” IEEE Trans. Nucl. Sci. NS-35 (6), 1673–1677 (1988).

    Article  Google Scholar 

  9. P.M. Carter and B.R. Wilkins, “Influences on Soft Error Rates in Static RAMs,” IEEE J. Solid State Circuits SC-22 430–436 (1987).

    Google Scholar 

  10. J.A. Zeutendyk, L.D. Edmonds, and L.S. Smith, “Characterization of Multiple-Bit Errors from Single Ion Tracks in Integrated Circuits,” IEEE Trans. Nucl. Sci. NS-36 (6), 2267–2274 (1989).

    Article  Google Scholar 

  11. G.C. Messenger and M.S. Ash The Effects of Radiation on Electronic Systems 2nd ed., Van Nostrand Reinhold, New York, 1992, Chap. 6.

    Google Scholar 

  12. E.G. Stassinopoulos, G.J. Brucker, O. Van Gunten, and H.S. Kim, “Variation of SEU Sensitivity of Dose Imprinted CMOS SRAMs,” IEEE Trans. Nucl. Sci. NS-36 (6), 2330–2338 (1989).

    Article  Google Scholar 

  13. T. Matsukawa, A. Kishide, T. Tanii, M. Koh, K. Horita, K. Hara, B. Shigeta, M. Goto, S. Matsuda, S. Kuboyama, and I. Ohdomari, “Total Dose Dependence of Soft Error Hardness in 64Kbit RAMs Evaluated by Single Ion Microprobe Technique,” IEEE Trans. Nucl. Sci. NS-41 (6), 2071–2076 (1994).

    Article  Google Scholar 

  14. C.L. Axness, J.R. Schwank, P.S. Winokur, J.S. Browning, R. Koga, and D.M. Fleetwood, “Single Event Upset in Irradiated 16K CM05 SRAMs,” IEEE Trans. Nucl. Sci. NS-35 (6), 1602–1607 (1988).

    Article  Google Scholar 

  15. A.B. Campbell and W.J. Stapor, “The Total Dose Dependence of the Single Event Upset Sensitivity of IDT Static RAMs,” IEEE Trans. Nucl. Sci. NS-31 (6), 1175–1177 (1984).

    Article  Google Scholar 

  16. R.C. Webb, L. Palkuti, L. Cohn, G. Kweder, and A. Constantine “The Commercial and Military Satellite Survivability Crisis,” Defense Electronics Magazine Aug.1995.

    Google Scholar 

  17. J.A. Adolphsen, J.L. Barth, E.G. Stassinopoulos, T. Gruner, M. Wennersten, K. LaBel, and C.M. Seidleck, “SEP Data from the APEX Cosmic Ray Upset Experiment: Predicting the Performance of Commercial Devices in Space,” Proc. Third European Conf. on Radiation And its Effects on Components and Systems, 1995.

    Google Scholar 

  18. C. Dufour, P. Gamier, T. Carriere, J. Beaucour, R. Ecoffier, and M. Labrunee, “Heavy Ion Induced Single Hard Errors in Submicron Memories,” IEEE Trans. Nucl. Sci. NS-39 (6), 1693–1697 (1992).

    Article  Google Scholar 

  19. G.H. Sandier System Reliability Engineering Prentice-Hall, Englewood Cliffs, NJ, 1963, pp. 162ff.

    Google Scholar 

  20. A. Tabor and E. Normand, “Single Event Upset in Avionics,” IEEE Trans. Nucl. Sci. NS-40 (2), 120–126 (1993).

    Article  Google Scholar 

  21. V. Pless Introduction to the Theory of Error Detecting Codes J. Wiley, New York, 1982, Chap 1.

    Google Scholar 

  22. J.A. Zoutendyk, H.R. Schwartz, R.K. Watson, Z. Hasnain, and L.R. Nevill, “Single Event Upset (SEU) in a DRAM With On-Chip Error Correction,” IEEE Trans. Nucl. Sci. NS-34 (6), 1310–1315 (1987).

    Article  Google Scholar 

  23. . R. Katz, R. Barto, P. McKerracher, B. Karkhuff, and R. Koga, “SEU Hardening of Field Programmable Gate Arrays (FPGA) for Space Application and Device Characterization IEEE Trans. Nucl. Sci. NS-41 (6), 2179–2186(1994).

    Article  Google Scholar 

  24. G.C. Messenger and M.S. Ash, The Effects of Radiation on Electronic Systems, 2nd ed., Van Nostrand Reinhold, New York, 1992, Section 13.2.

    Google Scholar 

  25. E.C. Smith, “Effects of Realistic Satellite Shielding on SEE Rates,” IEEE Trans. Nucl. Sci. NS-41 (6), 2396–2399 (1994).

    Article  Google Scholar 

  26. E. Normand and W.J. Stapor, “Variation in Proton Induced Upset Rates from Large Solar Hares Using an Improved SEU Model,” IEEE Trans. Nucl. Sci. NS-37 (6), 1947–1952 (1990).

    Article  Google Scholar 

  27. L.W. Ackerman, “Amplitude Distribution of Cosmic Ray Events in Intrinsic IR Detectors,” IEEE Trans. Nucl. Sci. NS-32 (6), 4185–4188 (1985).

    Article  Google Scholar 

  28. E.L. Price, P. Shapiro, J.H. Adams Jr., and E.A. Burke, “Calculation of Cosmic Ray Induced Soft Upsets and Scaling in VLSI Devices,” IEEE Trans. Nucl. Sci. NS-29 (6), 2055–2063 (1982).

    Google Scholar 

  29. P.J. McNulty, “Predicting Single Event Phenomena in Space,” NSRE Conf. Short Course, July 1990.

    Google Scholar 

  30. P.J. McNulty, W.J. Beauvais, and D.R. Roth, “Determination of SEU Parameters of NMOS and CMOS SRAMs,” IEEE Trans. Nucl. Sci. NS-38 (6), 1463–1470 (1991).

    Article  Google Scholar 

  31. E.G. Stassinopolous, G.J. Brucker, D.W. Nakamura, C.A. Stauffer, G.B. Gee, and J.L. Barth, “Solar Flare Proton Evaluation at Geostationary Orbits for Engineering Applications,” IEEE Trans. Nucl. Sci. NS-43 (2), 369–382 (1996).

    Article  Google Scholar 

  32. R.L. Pease, “Total Dose Issues for Microelectronics in Space Systems,” IEEE Trans. Nucl. Sci. NS-40 (2), 442–452 (1996).

    Article  Google Scholar 

  33. G.R. Hopkinson, C.J. Dale, and P.W. Marshall, “Proton Effects in Charge Coupled Devices,” IEEE Trans. Nucl. Sci. NS-40 (2), 614–627 (1996).

    Article  Google Scholar 

  34. L. Adams, R. Nickson, A. Kelleher, C.W. Millward, D.J. Stropel, and D. Czajkowski, “A Dosimetric Evaluation of the RADPAKTmUsing Mono-energetic Electrons and Protons,” IEEE Trans. Nucl. Sci. NS-43 (3), 1014–1017 (1996).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 1997 Springer Science+Business Media Dordrecht

About this chapter

Cite this chapter

Messenger, G.C., Ash, M.S. (1997). Single Event Phenomena II. In: Single Event Phenomena. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-6043-2_7

Download citation

  • DOI: https://doi.org/10.1007/978-1-4615-6043-2_7

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-412-09731-7

  • Online ISBN: 978-1-4615-6043-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics