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Impurity Distribution and Superconducting Properties of Pbte:T1 Crystals Grown in a Centrifuge

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Abstract

We have compared crystal structure, impurity distribution and superconducting parameters of Tl-doped PbTe crystals (up to 1.5 at.% Tl) grown by the Bridgman method at different gravity levels (from 1 g0 up to 10 g0). The goal of these experiments was to improve our understanding of the role of centrifugation on crystallisation processes, particularly component distribution in complex semiconductor systems. The effective distribution coefficient of Tl increased with increasing acceleration. Uniform Tl-doping was achieved at 10 g0.

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© 1997 Springer Science+Business Media New York

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Parfeniev, R., Shamshur, D., Regel, L.L., Nemov, S. (1997). Impurity Distribution and Superconducting Properties of Pbte:T1 Crystals Grown in a Centrifuge. In: Regel, L.L., Wilcox, W.R. (eds) Centrifugal Materials Processing. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5941-2_9

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  • DOI: https://doi.org/10.1007/978-1-4615-5941-2_9

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-7722-1

  • Online ISBN: 978-1-4615-5941-2

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