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Monte Carlo simulation of semiconductor transport

  • Chapter
Theory of Transport Properties of Semiconductor Nanostructures

Part of the book series: Electronic Materials Series ((EMAT,volume 4))

Abstract

The introduction of the Monte Carlo (MC) method [1] for the analysis of nonlinear charge transport in semiconductors is due to Kurosawa [2] who presented a study of high-field transport of holes in Ge at the semiconductor conference held in Kyoto in 1966.

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  1. Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 41100, Modena, Italy

    C. Jacoboni, R. Brunetti & P. Bordone

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  1. C. Jacoboni
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  2. R. Brunetti
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  3. P. Bordone
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  1. Institut für Theoretische Physik, Technische Universität Berlin, Germany

    Eckehard Schöll

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Jacoboni, C., Brunetti, R., Bordone, P. (1998). Monte Carlo simulation of semiconductor transport. In: Schöll, E. (eds) Theory of Transport Properties of Semiconductor Nanostructures. Electronic Materials Series, vol 4. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5807-1_3

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  • DOI: https://doi.org/10.1007/978-1-4615-5807-1_3

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