Abstract
In the last 10 years, the III-nitride semiconductors (A1N, GaN, InN and ternary compounds) have revealed promising physical and optical properties. Potential applications include blue light emitting diodes and ultraviolet (UV) detectors, as well as high power and high temperature electronic devices. Aluminum nitride has a wide band gap (6.2 eV). Because of its piezoelectric properties, it can also be used in field effect transistors as a gate dielectric film and in thin film microwave acoustic resonators.1 A high thermal conductivity (320 W/mK for ideally pure single crystals) and a thermal expansion coefficient close to that of Si (4–5 × 10−6/K for A1N and 3 × 10−6/K for Si) make the A1N/Si system a good candidate for microelectronics and for use in metal-insulator-semiconductor (MIS) devices. These applications require high quality crystals and low contamination in order to obtain near-ideal material characteristics.
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see also: C. Colliex, R. Brydson, V. Serin et S. Matar, to be published.
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Malengreau, F., Hagège, S., Sporken, R., Vermeersch, M., Caudano, R., Imhoff, D. (1998). Morphology and Microstructure of A1N Single Crystals on Si (111): A Combination of Surface Electron Spectroscopies and Transmission Electron Microscopies. In: Tomsia, A.P., Glaeser, A.M. (eds) Ceramic Microstructures. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5393-9_16
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DOI: https://doi.org/10.1007/978-1-4615-5393-9_16
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