Abstract
The ZnSe-ZnTe alloy system is an attractive material system for use in light-emitting devices in the green-to-blue spectral region (for recent study, see Ref. [1]). The ZnSe x Te1-x alloy system represents one of the very few wide-band-gap II–VI compound systems which can be synthesized in both p- and n-type conductivity forms with low resistivity [2,3]. The ZnSe x Te1-x alloy system has also attracted attention because of its anomalous variation of the band-gap energy with composition. It has been found both theoretically and experimentally that the alloy system has extremely strong band-gap bowing (see Ref. [4]): the lowest direct gap E 0 of the alloy system between x~0 and ∼0.7 lies below the gaps of the two constituents, ZnSe and ZnTe. It has also been reported that high-quality ZnSe x Te1-x films (0≤x≤1.0) can be grown epitaxially on GaAs and InP substrates by MBE [5].
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© 1999 Springer Science+Business Media New York
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Adachi, S. (1999). Zinc Seleno-Telluride (ZnSe x Te1-x ). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_48
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_48
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