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Optical Constants of Crystalline and Amorphous Semiconductors pp 530–545Cite as

Cadmium Telluride (CdTe)

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Abstract

Cadmium telluride (CdTe) is a direct-band-gap semiconductor (E g∼1.5 eV at 300 K) crystallizing in the cubic, zinc-blende structure. CdTe has been devoted to the development of semiinsulating crystals for applications in RT γ-ray detectors and as electro-optic and acoustooptic devices (see, e.g., [1]). As thin films, this material has also been used in solar cells, liquid-crystal imaging devices, and IR optics [2]. CdTe(111)B films with a 5 in. diameter have been grown on Si(100) substrates by MBE [3].

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  1. Department of Electronic Engineering, Gunma University, Kiryu-shi, Gunma, 376-8515, Japan

    Sadao Adachi

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© 1999 Springer Science+Business Media New York

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Adachi, S. (1999). Cadmium Telluride (CdTe). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_41

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  • DOI: https://doi.org/10.1007/978-1-4615-5247-5_41

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-8567-7

  • Online ISBN: 978-1-4615-5247-5

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