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Zinc Selenide (ZnSe)

  • Chapter
Optical Constants of Crystalline and Amorphous Semiconductors

Abstract

Zinc selenide (ZnSe) crystallizes in the cubic, zinc-blende structure, although it is also possible to grow hexagonal wurtzite form. ZnSe is the prototype of wide-band-gap II–VI semiconductors and plays an important role in the development of blue-green or blue injection lasers (see, e.g., Ref. [1]). Many attempts have, thus, been made to achieve epitaxial growth of ZnSe layers on GaAs substrates [2] because of the relatively small lattice mismatch between GaAs and ZnSe (∼0.27%). Its large band gap and closely lattice-matched nature make it also attractive for use as a passivation layer for GaAs and as an insulating layer of GaAs field-effect transistors [3]. ZnSe is also promising material for nonlinear optical devices (see, e.g., Ref. [4]).

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Authors and Affiliations

  1. Department of Electronic Engineering, Gunma University, Kiryu-shi, Gunma, 376-8515, Japan

    Sadao Adachi

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© 1999 Springer Science+Business Media New York

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Adachi, S. (1999). Zinc Selenide (ZnSe). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_35

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  • DOI: https://doi.org/10.1007/978-1-4615-5247-5_35

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-8567-7

  • Online ISBN: 978-1-4615-5247-5

  • eBook Packages: Springer Book Archive

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