Abstract
Silicon (Si) is the second most common element in the upper layer of the earth’s crust (about 25% of the crust consists of Si, and only oxygen exceeds it in abundance); however, this element is usually not found free, but mainly in its oxides and silicates. The Czochralski method is commonly used to produce single crystals of Si used for solid-state devices. Crystalline Si has a metallic luster and grayish color, and transmits more than 95% of all wavelengths of infrared, from 1.3 to 6.7 µm. Because of the pre-eminent position in VLSI circuit applications, Si-based devices now constitute about 95% of all semiconductor devices sold worldwide [1,2]. Even though some III–V compounds (such as GaAs and InGaAs) have certain advantages in material properties over Si, this trend is unlikely to change during the next few decades.
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References
J. D. Meindl, IEEE Trans. Electron. Dev. ED-31, 1555 (1984).
S. M. Sze, in High-Speed Semiconductor Devices, edited by S. M. Sze (Wiley-Interscience, New York, 1990), p. 1.
K. Seeger, J. Appl. Phys. 63, 5439 (1988).
T. S. Moss, Optical Properties of Semiconductors (Butterworth, London, 1959).
C. D. Salzberg and J. J. Villa, J. Opt. Soc. Am. 47, 244 (1957).
G. A. Samara, Phys. Rev. B 27, 3494 (1983).
J. R. Birch, Infrared Phys. 18, 613 (1978).
M. N. Afsar and J. B. Hasted, Infrared Phys. 18, 835 (1978).
R. J. Collins and H. Y. Fan, Phys. Rev. 93, 674 (1954).
M. Lax and E. Burstein, Phys. Rev. 97, 39 (1955).
F. A. Johnson, Proc. Phys. Soc. London 73, 265 (1959).
J. R. Aronson, H. G. McLinden, and P. J. Gielisse, Phys. Rev. 135, A785 (1964).
B. Bendow, H. G. Lipson, and S. P. Yukon, Appl. Opt. 16, 2909 (1977).
M. M. Pradhan, R. K. Garg, and M. Arora, Infrared Phys. 27, 25 (1987).
Z. Jichang, W. Jiangen, M. Bilan, Z. Jingbing, and Q. Fenyuan, Infrared Phys. 33, 381 (1992).
W. Primak, Appl. Opt. 10, 759 (1971).
R. Hulthén, Phys. Scripta. 12, 342 (1975).
D. F. Edwards and E. Ochoa, Appl. Phys. 19, 4130 (1980).
H. H. Li, J. Phys. Chem. Ref. Data 9, 561 (1980).
D. F. Edwards, in Handbook of Optical Constants of Solids, edited by E. D. Palik (Academic, Orlando, 1985), p. 547.
G. G. Macfarlane, T. P. McLean, J. E. Quarrington, and V. Roberts, Phys. Rev. 111, 1245 (1958).
M. J. Keevers and M. A. Green, Appl. Phys. Lett. 66, 174 (1995).
D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
G. E. Jellison, Jr., Opt. Mater. 1, 41 (1992).
V. Nayar, W. Y. Leong, C. Pickering, A. J. Pidduck, R. T. Carline, and D. J. Robbins, Appl. Phys. Lett. 61, 1304 (1992).
D. E. Aspnes and A. A. Studna, Appl. Phys. Lett. 39, 316 (1981).
T. Yasuda and D. E. Aspnes, Appl. Opt. 33, 7435 (1994).
K. Utani, T. Suzuki, and S. Adachi, J. Appl. Phys. 73, 3467 (1993).
H. Yao, J. A. Woollam, and S. A. Alterovitz, Appl. Phys. Lett. 62, 3324 (1993).
H. R. Philipp, J. Appl. Phys. 43, 2835 (1972).
B. L. Henke, P. Lee, T. J. Tanaka, R. L. Shimabukuro, and B. K. Fujikawa, At. Data Nucl. Data Tables 27, 1 (1982).
C. Gähwiller and F. C. Brown, in Proc. 10th Int. Conf. Phys. Semicond., Cambridge, Mass., 1970, edited by S. P. Keller, J. C. Hensel, and F. Stern (U. S. Atomic Energy Commission, Springfield, Va., 1970), p. 213.
F. C. Brown, R. Z. Bachrach, and M. Skibowski, Phys. Rev. B 15, 4781 (1977).
D. L. Windt, W. C. Cash, Jr., M. Scott, P. Arendt, B. Newnam, R. F. Fisher, A. B. Swartzlander, P. Z. Takacs, and J. M. Pinneo, Appl. Opt. 27, 279 (1988).
M. Yanagihara, M. Niwano, T. Yamada, and S. Yamaguchi, Appl. Opt. 27, 563 (1988).
S. C. Woronick, W. Ng, A. Król, and Y. H. Kao, J. Phys. Chem. Solids 53, 1265 (1992).
R. Soufli and E. M. Gullikson, Appl. Opt. 36, 5499 (1997).
B. L. Hanke, P. Lee, T. J. Tanaka, R. L. Shimabukuro, and B. K. Fujikawa, AIP Conf.Proc. 75, 340 (1981).
E. Hartmann, P. O. Hahn, and R. J. Behm, J. Appl. Phys. 69, 4273 (1991).
P. Lautenschlager, M. Garriga, L. Vina, and M. Cardona, Phys. Rev. B 36, 4821 (1987).
G. E. Jellison, Jr. and F. A. Modine, J. Appl. Phys. 16, 3758 (1994).
T. Aoki and S. Adachi, J. Appl. Phys. 69, 1574 (1991).
W. Spitzer and H. Y. Fan, Phys. Rev. 108, 268 (1957).
Z.-H. Zhou, B. Choi, M. I. Flik, S. Fan, and R. Feif, J. Appl. Phys. 76, 2448 (1994).
A. Gaymann, H. P. Geserich, and H. v. Löhneysen, Phys. Rev. B 52, 16486 (1995).
L. Vina and M. Cardona, Phys. Rev. B 29, 6739 (1984).
G. E. Jellison, Jr., S. P. Withrow, J. W. McCamy, J. D. Budai, D. Lubben, and M. J. Godbole, Phys. Rev. B 52, 14607 (1995).
M. Bertolotti, V. Bogdanov, A. Ferrari, A. Jascow, N. Nazorova, A. Pikhtin, and L. Schirone, J. Opt. Soc. Am. B 7, 918 (1990).
J. A. McCaulley, V. M. Donnelly, M. Vernon, and I. Taha, Phys. Rev. B 49, 7408 (1994).
G. Ghosh, J. Appl. Phys. 79, 9388 (1996).
H. Lee and E. D. Jones, Appl. Phys. Lett. 68, 3153 (1996).
P. Etchegoin, J. Kircher, and M. Cardona, Phys. Rev. B 47, 10292 (1993).
L. T. Canham, Appl. Phys. Lett. 57, 1064 (1990).
F. Huaxiang, Y. Ling, and X. Xide, Phys. Rev. B 48, 10978 (1993).
M. S. Hybertsen, Phys. Rev. Lett. 72, 1514 (1994).
L.-W. Wang and A. Zunger, Phys. Rev. Lett. 73, 1039 (1994).
H. Münder, M. G. Berger, H. Lüth, U. Rossow, U. Frotscher, W. Richter, R. Herino, and M. Ligeon, Appl. Surf. Sci. 63, 57 (1993).
U. Rossow, H. Münder, M. Thönissen, and W. Theiß, J. Lumin. 57, 205 (1993).
L. H. Qin, Y. D. Zheng, R. Zhang, S. L. Gu, H. T. Shi, and D. Feng, Appl. Phys. A 58, 163 (1994).
S. Adachi, Phys. Rev. B 38, 12966 (1988); J. Appl. Phys. 66, 3224 (1989).
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Adachi, S. (1999). Silicon (Si). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_3
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