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General Remarks

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Abstract

There has been considerable interest in the III–V semiconductor alloys for many device applications. Literature on the fundamental properties of these alloys is growing rapidly [1,2]. However, some practical device parameters in these materials have been hampered by a lack of definite knowledge of many material parameters. An interpolation scheme is a powerful tool for estimating some material parameters of semiconductor alloys. Although the scheme is still open to experimental verification, it provides more reliable values over the entire range of alloy composition [3].

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References

  1. H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Academic, New York, 1978), Parts A and B.

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  2. A.-B. Chen and A. Sher, Semiconductor Alloys: PhySiCs and Material Engineering (Plenum, New York, 1995).

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  3. S. Adachi, PhySiCal Properties of III–V Semiconductor Compounds: InP, InAs GaAs, GaP, InGaAst and InGaAsP (Wiley-Interscience, New York, 1992).

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  4. S. Adachi, J. Appl. Phys. 58, R1 (1985).

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  5. S. Adachi, J. Appl. Phys. 53, 5863 (1982).

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© 1999 Springer Science+Business Media New York

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Adachi, S. (1999). General Remarks. In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_28

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  • DOI: https://doi.org/10.1007/978-1-4615-5247-5_28

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-8567-7

  • Online ISBN: 978-1-4615-5247-5

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