Abstract
Indium antimonide (InSb) has the smallest band gap of any of the III–V semiconductors (E o∼0.18 eV at 300 K, Ref. [1]). InSb is, thus, an interesting semiconductor for use in long-wavelength optoelectronic device applications. Its relatively high electron mobility (μn∼7×104 cm2/V-s at 300 K, Ref. [1]) makes it an attractive material for use in galvanomagnetic and Seebeck device applications. InSb also has the lowest melting point (T m=800 K) and largest lattice constant (a 0 =6.47931 Å at 298.15 K) among the III–V semiconductors [1].
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Adachi, S. (1999). Indium Antimonide (InSb). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_27
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_27
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