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Indium Arsenide (InAs)

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Abstract

Indium arsenide (InAs) is a direct-band-gap semiconductor crystallizing in the zinc-blende structure. The relatively small direct band gap (∼0.36 eV at 300 K, Ref. [1]) and resulting high electron mobility (μn≥1×104 cm2/Vs at 300 K, Ref. [1]) have made this material interesting for use in Hall-effect device applications (see Ref. [2]). As a substrate, or active layer, InAs can be employed in conjunction with many semiconductors such as AlGaSb or InAsSb and has interesting heterojunction potential for modulation-doped field effect transistors, lasers and detectors in the wavelength range up to 10 μm, and quantum-well structures [2],

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Adachi, S. (1999). Indium Arsenide (InAs). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_26

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  • DOI: https://doi.org/10.1007/978-1-4615-5247-5_26

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-8567-7

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