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Indium Phosphide (InP)

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Optical Constants of Crystalline and Amorphous Semiconductors

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Abstract

Indium phosphide (InP) and its related alloys InGaAs(P) have received much attention because of their wide use in the fabrication of laser diodes and detectors operating in the 1.3–1.7-μn wavelength region (see Ref. [1]). High-speed electronic devices, such as heterojunction bipolar transistors and high-electron mobility transistors are also being realized from InP-related heterostructures (see Ref. [2]). A review of many phySiCal and semiconducting properties of InP has been given in Refs. [3–5].

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Authors and Affiliations

  1. Department of Electronic Engineering, Gunma University, Kiryu-shi, Gunma, 376-8515, Japan

    Sadao Adachi

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© 1999 Springer Science+Business Media New York

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Adachi, S. (1999). Indium Phosphide (InP). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_25

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  • DOI: https://doi.org/10.1007/978-1-4615-5247-5_25

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-8567-7

  • Online ISBN: 978-1-4615-5247-5

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