Abstract
Gallium antimonide (GaSb) is a semiconductor of the group III–V compounds. Its lattice has the zinc-blende structure; the melting point of the compound is 985 K [1]. GaSb and its lattice-matched alloy systems AlGaAsSb and InGaAsSb have been employed in various optoelectronic and electron devices, such as lasers, photode-tectors, and heterojunction bipolar transistors [2], The study of low carrier concentration GaSb layer is crucial for the fabrication of such GaSb-based devices. With the current progress in MBE and MOCVD it has now been possible to grow high-quality, undoped GaSb with a residual carrier density as low as 1×1016 cm-3 [3,4].
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Adachi, S. (1999). Gallium Antimonide (GaSb). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_23
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_23
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