Abstract
Aluminum antimonide (AlSb) is a zinc-blende-type semiconductor with an indirect gap of ∼1.6 eV at room temperature [1]. AlSb is one of the less studied III–V compound semiconductors. This is due to its unfavorable chemical behavior and difficulties in bulk crystal growth. However, the interest in this material has considerably increased in recent years due to its phySiCal and technological importance in connection with GaSb/AlSb superlattices [2]. Its related alloys, such as Al x Ga1-x Sb and Al x Ga1-x AS y Sb1-y , are also promising materials for many optoelectronic devices in the near-IR spectral region (see Refs. [3,4]).
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References
Numerical Data and Functional Relationships in Science and Technology, edited by K.-H. Hellwege and O. Madelung, Landolt-Börnstein, New Series, Group III, Vol. 17, Pt. a (Springer, Berlin, 1982).
G. P. Schwartz, G. J. Gualtieri, W. A. Sunder, and L. A. Farrow, Phys. Rev. B 36, 4868 (1987).
A. Joullie, B. Girault, A. M. Joullie, and A. Zien-Eddine, Phys. Rev. B 25, 7830 (1982).
C. Alibert, M. Skouri, A. Joullie, M. Benouna, and S. Sadiq, J. Appl. Phys. 69, 3208 (1991).
M.-Z. Huang and W. Y. Ching, J. Phys. Chem. Solids 46, 977 (1985).
K. Strössner, S. Ves, C. K. Kim, and M. Cardona, Phys. Rev. B 33, 4044 (1986).
S. Zollner, C. Lin, E. Schönherr, A. Böhringer, and M. Cardona, J. Appl. Phys. 66, 383 (1989).
S. Adachi, J. Appl. Phys. 67, 6427 (1990).
M. Hass and B. W. Henvis, J. Phys. Chem. Solids 23, 1099 (1962).
W. J. Turner and W. E. Reese, Phys. Rev. 127, 126 (1962).
R. F. Blunt, H. P. R. Frederikse, J. H. Becker, and W. R. Hosier, Phys. Rev. 96, 578 (1954).
W. J. Turner and W. E. Reese, Phys. Rev. 117, 1003 (1960).
E. Haga and H. Kimura, J. Phys. Soc. Jpn 19, 1596 (1964).
R. Braunstein and E.O. Kane, J. Phys. Chem. Solids 23, 1423 (1962).
N. N. Sirota and A. I. Lukomskii, Sov. Phys.-Semicond. 7, 140 (1973).
F. Oswald and R. Schade, Z. Naturf. A 9, 611 (1954).
T. E. Fischer, Phys. Rev. 139, A1228 (1965).
D. E. Aspnes, B. Schwartz, A. A. Studna, L. Derick, and L. A. Koszi, J. Appl. Phys. 48, 3510 (1977).
M. Cardona, W. Gudat, B. Sonntag, and P. Y. Yu, in Proc. 10th Int. Conf. Phys. Semicond., Cambridge, Mass., 1970, edited by S. P. Keller, J. C. Hensel, and F. Stern (U. S. Atomic Energy Commission, Springfield, Va., 1970), p. 209.
C. M. Herzinger, P. G. Snyder, F. G. Celii, Y.-C. Kao, D. Chow, B. Johs, and J. A. Woollam, J. Appl. Phys. 79, 2663 (1996).
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Adachi, S. (1999). Aluminum Antimonide (AISb). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_18
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_18
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