Abstract
Aluminum nitride (A1N) has a large band gap (∼6 eV at 300 K), a high thermal conductivity (∼3.2 W cm−1 K1 at 300 K), and large piezoelectric constants (∼∣2−5∣×10−10 cm/V at 300 K) (see Ref. [1]). AIN has also excellent insulator and passivation properties, low dispersion of permittivity, and low dielectric loss. These make it useful for numerous device applications (see, e.g., Ref. [2]).
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References
Numerical Data and Functional Relationships in Science and Technology, edited by K.-H. Hellwege and O. Madelung, Landolt-Börnstein, New Series, Group III, Vol. 17, Pt. a (Springer, Berlin, 1982).
S. N. Mohammad, A. A. Salvador, and H. Morkoç, Proc. IEEE 83, 1306 (1995).
S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, and G. A. Slack, Appl. Phys. Lett. 63, 1182 (1993), and references cited therein.
A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, Phys. Rev. B 48, 11810 (1993).
D. Jones and A. H. Lettington, Solid State Commun. 11, 701 (1972).
P. B. Perry and R. F. Rutz, Appl. Phys. Lett. 33, 319 (1978).
H. Yamashita, K. Fukui, S. Misawa, and S. Yoshida, J. Appl. Phys. 50, 896 (1979).
V. V. Michailin, V. E. Oranovskii, S. Pačesová, J. Pastrňák, and A. S. Salama-tov, Phys. Status Solidi B 55, K51 (1973).
S. Loughin and R. H. French, in Properties of Group III Nitrides, EMIS Datareviews Series No. 11, edited by J. H. Edgar (INSPEC (IEE), London, 1994), p. 175.
W. R. L. Lambrecht and B. Segall, Phys. Rev. B 43, 7070 (1991).
A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirlehy, and S. G. Louie, Phys. Rev. B 48, 11810 (1993).
W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia, J. Appl. Phys. 79, 188 (1996).
A. T. Collins, E. C. Lightowlers, and P. J. Dean, Phys. Rev. 158, 833 (1967).
I. Akasaki and M. Hashimoto, Solid State Commun. 5, 851 (1967).
J. Pastrňák and B. Hejda, Phys. Status Solidi 35, 941 (1969).
J. Pastrňák and B. Hejda, Phys. Status Solidi 35, 953 (1969).
P. Wisniewski, W. Knap, J. P. Malzac, J. Camassel, M. D. Bremser, R. F. Davis, and T. Suski, Appl. Phys. Lett. 73, 1760 (1998).
J. Pastrňák and L. Roskovcová, Phys. Status Solidi 14, K5 (1966).
L. Roskovcová, J. Pastrňák,, and R. Babušková, Phys. Status Solidi 20, K29 (1967).
X. Tang, Y. Yuan, K. Wongchotigul, and M. G. Spencer, Appl. Phys. Lett. 70, 3206 (1997).
W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, J. Appl. Phys. 44, 292 (1973).
G. A. Slack and T. F. McNelly, J. Cryst. Growth 42, 560 (1977).
J. Pastrňák and L. Roskovcová, Phys. Status Solidi 26, 591 (1968).
G. A. Slack and T. F. McNelly, J. Cryst. Growth 34, 263 (1976).
Q. Guo, M. Nishio, H. Ogawa, and A. Yoshida, Phys. Rev. B 55, R15987 (1997).
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Adachi, S. (1999). Aluminum Nitride (AIN). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_15
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_15
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