Semiconductor-, Lithography-, and Electrically-Related Applications

Abstract

Electron-beam (e-beam) lithography has over the past 15 years or so taken a predominant role in Si wafer patterning in the semiconductor industry due to its sub-micron (and potential nano-scale) resolution. This high resolution and the accurate focussing of e-beams is however limited by charging which occurs in the photo-resist: a trapping of charge within this photoresist leads to deflection of the e-beam and thus distortion or broadening of written patterns. To tackle this problem, metal coatings were the only materials available for use as discharge layers within the resist systems until about 10 years ago. However, the process was expensive due to the tooling required for metal deposition, and the metal was frequently difficult to remove.