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At or Below the Fundamental Absorption Edge

  • Chapter
Optical Properties of Crystalline and Amorphous Semiconductors

Abstract

(a) Direct-Gap Edge—In obtaining Eq. (3.5), we assumed that the matrix element Pcv(k) is constant in its value so that we can obtain the well-known line shape of ε2 at the 3D Mo CP [Eq. (3.14)]. In cases where transitions are forbidden in the electric-dipole approximation, one can make use of the k dependence of the matrix element and expand around the CP at kc and keep only the linear term. We can, then, obtain for “forbidden” direct transitions at the 3D Mo CP [1]

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  1. Department of Electronic Engineering, Gunma University, Japan

    Sadao Adachi

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Adachi, S. (1999). At or Below the Fundamental Absorption Edge. In: Optical Properties of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5241-3_5

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