Skip to main content

Silicon Process Flow: ZnO actuator and piezoresistive sensor

  • Chapter
Bringing Scanning Probe Microscopy up to Speed

Part of the book series: Microsystems ((MICT,volume 3))

  • 104 Accesses

Abstract

This chapter provides a step by step process for fabricating the ZnO cantilever. We begine by determining values for the piezoresistive coefficient for different doping levels. This is most easily done using the tables published by Kandal. Figure8.1.1a is the plot of piezoresistive coefficients for the different orientations of silicon. We are primarily concerned with (110) orientation in the top half of the figure, which gives the longitudinal coefficient, when the current and stress are in the same direction. Figure 8.1.1b gives a modifier, which depends on doping and temperature, to the result in found in Figure 8.l.la.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

eBook
USD 16.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Reference

  1. Y. Kanda, “ A Graphical Representation of the Piezoresistance Coefficients in Silicon,” IEEE Trans. Ele. Dev., ED-29, 64 (1982)

    Article  CAS  Google Scholar 

  2. D. Kao, J.Mc Vittie, W. Nix, K. Saraswat, “Two-dimensional thermal oxidation of silicon. II. Modelling stress effects in wet oxides” IEEE Trans. Electron Devices Vol. ED-34, no 1, pp1008, 1987.

    Google Scholar 

  3. S. Wolf and R.N. Tauber, “Silicon Processing for the VLSI Era,”, Vol, pp 213, Lattice Press, Sunset Beach, California (1986).

    Google Scholar 

  4. J.C. Zesch, B. Hadimioglu, B. T. Khuri-Yakub, M. Lim, R. Lujan, J. Ho, S. Akamine, D. Steinmetz, C.F. Quate, and E.G. Rawson, “Deposition of highly oriented low-stress ZnO films” Ultrasonics Symposium Proceedings, B.R. McAvoy, New York, N.Y., 1, pp445, (1991).

    Google Scholar 

  5. T. Albrecht “Advances in atomic force microscopy and scanning tunneling microscopy” PhD. Thesis, Stanford University, 1989.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 1999 Springer Science+Business Media New York

About this chapter

Cite this chapter

Minne, S.C., Manalis, S.R., Quate, C.F. (1999). Silicon Process Flow: ZnO actuator and piezoresistive sensor. In: Bringing Scanning Probe Microscopy up to Speed. Microsystems, vol 3. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5167-6_8

Download citation

  • DOI: https://doi.org/10.1007/978-1-4615-5167-6_8

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-7353-7

  • Online ISBN: 978-1-4615-5167-6

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics