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Numerical recipes

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Part of the book series: Electronic Materials Series ((EMAT,volume 5))

Abstract

The concentration of free carriers in the conduction band can be calculated by

$$\begin{gathered} n = 4\pi {\left( {\frac{{2{m^*}{k_B}T}}{{{h^2}}}} \right)^{3/2}}\int_0^\infty {\frac{{{x^{1/2}}dx}}{{\exp (x - \eta ) + 1}}} \hfill \\ = \frac{{2{N_c}}}{{\sqrt \pi }}{F_{1/2}}(\eta ) \hfill \\ \end{gathered} $$
((6.1))

where N c is the effective density of states in the conduction band, m* is the density-of-state effective mass, x = E/k B T is the carrier energy in unit of k B T, η =E f /k B T is the Fermi level in unit of k B T F 1/2 (η) is the Fermi-Dirac integral of order of 1/2.

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References

  1. D. Bednarczyk and J. Bednarczyk, “The approximation of the Fermi-Dirac integral F 1/2 (η)”, Phys. Lett. vol.64 A, p.409, 1978.

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  5. Y. Fu, M. Willander, P. Han, T. Matsuura, and J. Murota, “Local environment effect on electronic band structure of cubic Si1-y Cy alloy”, Phys. Rev. vol.B58, p.7717–22, 1998.

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© 1999 Springer Science+Business Media New York

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Fu, Y., Willander, M. (1999). Numerical recipes. In: Physical Models of Semiconductor Quantum Devices. Electronic Materials Series, vol 5. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5141-6_6

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  • DOI: https://doi.org/10.1007/978-1-4615-5141-6_6

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-8457-1

  • Online ISBN: 978-1-4615-5141-6

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