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Quantum optoelectronics

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Physical Models of Semiconductor Quantum Devices

Part of the book series: Electronic Materials Series ((EMAT,volume 5))

Abstract

A large amount of both theoretical and experimental works has been published concerning the resonant tunneling structure (RTD) leading to a broad range of electrical [1, 2] as well as optical [3, 4] applications. Photoluminescence (PL) characterization of the resonant-tunneling light-emitting diode (RTLED) consists of mainly the recombination of electrons and holes that each tunnel from the opposite contact layers into the central RTD active layer. If the two contact layers are both n +-type, the electrons are majority carriers and holes are photocreated minority carriers (if the contacts are p +-type, the roles of electrons and holes are exchanged) [5]; if one contact is n +-type and the other p +-type, both electrons and holes are majority carriers [6].

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  1. Gothenburg University, Sweden

    Ying Fu & Magnus Willander

  2. Chalmers University of Technology, Sweden

    Ying Fu & Magnus Willander

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  1. Ying Fu
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Fu, Y., Willander, M. (1999). Quantum optoelectronics. In: Physical Models of Semiconductor Quantum Devices. Electronic Materials Series, vol 5. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5141-6_5

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