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This Chapter describes the fabrication of membrane resonators with thermomechanical excitation and piezoresistive detection of transverse vibrations. The devices are fabricated using standard industrial silicon technology. Two different silicon processes are used: one is a silicon pressure sensor process of the company Micronas Semiconductor, Bevaix, Switzerland, and the other the 2 µm CMOS process CBT of the company AMS Austria Mikro Systeme International, Unterpremstätten, Austria. The focus of this Chapter is on the post-processing of the silicon chips, i.e., the release of the membrane structure processed with either the industrial silicon sensor process or the commercial CMOS process.
KeywordsSensor Process Nitride Layer CMOS Process Rear Side Wheatstone Bridge
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