Abstract
The wide number of applications of low-temperature plasmas in the semiconductor1,2 and high voltage applications3 demand more insight into the basic collisional processes taking place between electrons, ions and neutrals. for instance, methane and its mixtures with argon and hydrogen are used for ethcing GaAs wafers and diamond-like surface coatings. There is at present an increasing number of investigations dealing with the study of ion kinetics and mass spectrometry of fragment products as a means of providing more useful and comprehensive reaction schemes, as well as reliable quantitative data that may improve discharge simulation and modeling. Many of the above studies are now centred at high values of the density-reduced electric field intensity, E/N.
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de Urquijo, J., Basurto, E., Cisneros, C., Alvarez, I. (1998). A Study of Ion-Molecule Reactions of Methane Ions in Parent Gas at High E/N. In: Christophorou, L.G., Olthoff, J.K. (eds) Gaseous Dielectrics VIII. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-4899-7_7
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DOI: https://doi.org/10.1007/978-1-4615-4899-7_7
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