Abstract
Measurements are reported of (i) the electron drift velocity in pure trifluoromethane (CHF3) gas and in its mixtures with argon, and (ii) electron attachment in pure CHF3. the electric field-to-gas density ratio (E/N) dependence of the electron drift velocity in the mixtures exhibits regions of distinct negative differential conductivity. the values of the electron attachment coefficients in pure CHF3 are small and decrease with E/N. the measurements were made at room temperature and cover the E/N range from 0.05 x 10-17 V cm2 to 60 x 10-17V cm2 (0.05 Td to 60 Td, 1 Td = 10-17 V cm2). the electron attachment rate constant is virtually independent of E/N below about 50 x 1017 V cm2 and equal to ∼ 13 x 10-14 cm3 s-1. This small attachment rate constant may be due to impurities.
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Wang, Y., Christophorou, L.G., Olthoff, J.K., Verbrugge, J.K. (1998). Electron Drift Velocities and Electron Attachment Coefficients in Pure CHF3 and its Mixtures with Argon. In: Christophorou, L.G., Olthoff, J.K. (eds) Gaseous Dielectrics VIII. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-4899-7_5
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DOI: https://doi.org/10.1007/978-1-4615-4899-7_5
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