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Quantum Semiconductor Devices and Technologies pp 233–258Cite as

Structural characterization of self-organized Ge islands

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Part of the book series: Electronic Materials Series ((EMAT,volume 6))

Abstract

Coherent island formation in the SiGe material system has been studied for a number of years [1,2]. The lattice mismatch of 4.2% allows the fabrication of islands with diameters ranging from about 100 to 2,500Å.

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Author information

Authors and Affiliations

  1. Institut für Halbleiterphysik, Johannes Kepler Universität, Altenbergerstr. 69, A-4040, Linz, Austria

    A. A. Darhuber & G. Bauer

  2. Walter Schottky Institut, Technische Universität München Am Coulombwall, D-85748, Garching, Germany

    P. Schittenhelm & G. Abstreiter

Authors
  1. A. A. Darhuber
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  2. G. Bauer
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  3. P. Schittenhelm
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  4. G. Abstreiter
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Editor information

Editors and Affiliations

  1. Centre de Européen de Recherche de Fontainbleau, Corning, S.A., Avon, France

    T. P. Pearsall

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Darhuber, A.A., Bauer, G., Schittenhelm, P., Abstreiter, G. (2000). Structural characterization of self-organized Ge islands. In: Pearsall, T.P. (eds) Quantum Semiconductor Devices and Technologies. Electronic Materials Series, vol 6. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-4451-7_6

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  • DOI: https://doi.org/10.1007/978-1-4615-4451-7_6

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