Abstract
Band structure of unstrained zinc blende semiconductors is shown schematically in Fig. 5.1(a). A semiconductor layer grown on a substrate of different material is generally strained. The strain is biaxial. We discuss the modification in the bandstructure caused by the strain in this section.
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© 2000 Springer Science+Business Media New York
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Jain, S., Willander, M., Van Overstraeten, R. (2000). Band structure and optical properties. In: Compound Semiconductors Strained Layers and Devices. Electronic Materials Series, vol 7. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-4441-8_5
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DOI: https://doi.org/10.1007/978-1-4615-4441-8_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-7769-6
Online ISBN: 978-1-4615-4441-8
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