Abstract
We mentioned in Chapter 3 that as grown thick strained semiconductor layers are generally metastable because sufficient number of dislocations are not generated at the growth temperature. On annealing at higher temperatures and/or for longer times, dislocations are produced and strain relaxes. Strain has been measured in pseudomorphic as well as in partially relaxed layers. Kinetics of strain relaxation have been studied in GeSi-, InGaAs- and II-VI-strained layers. Measurements of strain in pseudomorphic and partially relaxed layers and interpretation of the experimental results are discussed for several cases in this chapter. Strain relaxation has been measured using a very large number of techniques. Many different semiconductor heterostructures have been investigated. Additional measurements of strain are discussed along with the optical properties in .
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© 2000 Springer Science+Business Media New York
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Jain, S., Willander, M., Van Overstraeten, R. (2000). Strain relaxation and defects. In: Compound Semiconductors Strained Layers and Devices. Electronic Materials Series, vol 7. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-4441-8_4
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DOI: https://doi.org/10.1007/978-1-4615-4441-8_4
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-7769-6
Online ISBN: 978-1-4615-4441-8
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