Abstract
Intersubband transitions in narrow semiconductor quantum wells are the basis of new kinds of infrared detectors. An effective real space transfer of the excited electrons is achieved by tunneling into barrier states. This leads to negative in-plane conductivity. The spectral dependence of absorption and photoconductivity in modulation doped GaAs/(AlGa)As multi quantum well structures is discussed.
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© 1991 Springer Science+Business Media New York
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Abstreiter, G. et al. (1991). Intersubband Absorption and Real Space Electron Transfer in GaAs Quantum Wells. In: Chang, L.L., Mendez, E.E., Tejedor, C. (eds) Resonant Tunneling in Semiconductors. NATO ASI Series, vol 277. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3846-2_47
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DOI: https://doi.org/10.1007/978-1-4615-3846-2_47
Publisher Name: Springer, Boston, MA
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