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MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices

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Resonant Tunneling in Semiconductors

Part of the book series: NATO ASI Series ((NSSB,volume 277))

Abstract

MBE growth and electrical characteristics of various double barrier quantum well structures on GaAs substrates are presented in the light of the optimization of structural and growth parameters. Device-oriented structures were grown not only in the conventional GaAs/GaAlAs system but also utilising a pseudomorphic InGaAs layer as central potential well or as a “prewell” adjacent to a conventional structure. We obtain the highest room temperature peak-to-valley current ratios (up to 5.9) reported to date for GaAs-based structures. Through comparative experiments with different well materials we are able to explain the asymmetry which is commonly observed between forward and reverse bias in the I-V characteristics.

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Author information

Authors and Affiliations

  1. Siemens Research Laboratories, P.O. Box 83 09 52, D - 8000, München 83, West-Germany

    H. Riechert, D. Bernklau, J.-P. Reithmaier & R. D. Schnell

Authors
  1. H. Riechert
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  2. D. Bernklau
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  3. J.-P. Reithmaier
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  4. R. D. Schnell
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Editor information

Editors and Affiliations

  1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA

    L. L. Chang  & E. E. Mendez  & 

  2. Universidad Autonoma de Madrid, Madrid, Spain

    C. Tejedor

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© 1991 Springer Science+Business Media New York

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Riechert, H., Bernklau, D., Reithmaier, JP., Schnell, R.D. (1991). MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices. In: Chang, L.L., Mendez, E.E., Tejedor, C. (eds) Resonant Tunneling in Semiconductors. NATO ASI Series, vol 277. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3846-2_3

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  • DOI: https://doi.org/10.1007/978-1-4615-3846-2_3

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-6716-1

  • Online ISBN: 978-1-4615-3846-2

  • eBook Packages: Springer Book Archive

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