Abstract
The tunnel escape time or the state lifetime of electrons that determines the transversal time in GaAs/AlAs double-barrier tunneling structures has been directly determined by measuring and analysing the photoluminescence (PL) decay trate. The measured values τ were found to agree very well with the theoretical value 2ħ/ΔE determined from the full width ΔE of resonant transmission peak. This agreement is maintained even when τ falls in the time range of 10~100 ps, suggesting that the escape rate is scarcely affected by the carrier scattering. In addition, the accumulation of electron wave during the resonant tunneling process has been studied directly by measuring the PL and PL excitation spectra as functions of bias voltage. The measured density of accumulated charge is found to follow closely with the resonant current and determined to be 5×1011/cm2 at the resonant voltage.
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References
R. Tsu and L. Esaki, “Tunneling in a finite superlattice”, Appl. Phys. Lett. 22, 562 (1973)
T. Weil and B. Vinter, “Eugivalence between resonant tunneling and sequential tunneling in double barrier diodes” Appl. Phys. Lett. 50, 1281 (1987)
M. Tsuchiya and H Sakaki, “Precise control of resonant tunneling current in AlAs/GaAs/AlAs double barrier diode structures”, Jpn. J. Appl. Phys. Pt. 2 25, L185 (1986)
M. Tsuchiya and H Sakaki, “Dependence of resonant tunneling current on well widths in AlAs/GaAs double barrier diode structures”, Appl. Phys. Lett. 49, 88 (1986)
M. Tsuchiya and H Sakaki, “Dependence of resonant tunneling current on Al mole fractions in A1GaAs-GaAs-A1GaAs doubel barrier diode structures”, Appl. Phys. Lett. 50, 1503 (1987)
M. Tsuchiya, T. Matsusue, and H. Sakaki, “Tunneling escape rate of electrons from quantum well in double barrier heterostructures”, Phys. Rev. Lett. 59, 2356 (1987)
H. Yoshimura, J. N. Schulman and H. Sakaki, “Charge accumulation in a double-barrier resonant-tunneling structure studied by photoluminescence and photoluminescence-excitation spectroscopy”, Phys. Rev. Lett. May 9 1990
E. Mendez, “Physics of resonant tunneling in semiconductors”, Proc. of a Nato Advanced Inst. on Phys. and Applications of Quantum Well and Superlattices, Erice, Italy, 1987 (Plenum Press, NATO ASI Series B: Physics vol. 9. 170), p.159
V. J. Goldman, D. C. Tsui, and J. E. Cunningham, “Observation of intrinsic bistability in resonant-tunneling structures”, Phys. Rev. Lett. 58, 1256 (1987)
V. J. Goldman, D. C. Tsui, and J. E. Cunningham, “Resonant tunneling in magnetic fields: Evidence for space-charge buildup”, Phys. Rev. B35, 9387 (1987)
M. L. Leadbeater, E. S. Alves, L. Eaves, M. Henini, O. H. Hughes, F. W. Sheard and G. A. Tooms, “Charge build-up and intrinsic bistability in and symmetric resonant-tunnelling structure”, Semicond. Sci. and Technol. 3, 1060 (1988)
J. F. Young, B. M. Wood, G. C. Aers. R. L. S. Devine, H. C. Liu, D. Landheer, M. Buchanan, A. J. Springthorpe and P. Mandeville, “Determination of charge accumulation and its characteristic time in double-barrier resonant tunneling structures using steady-state photoluminescence”, Phys. Rev. Lett. 60, 2085 (1988)
D. G. Hayes, M. S. Skolnick, P. E. Simmonds, L. Eaves, D. P. Halliday, M. L. Leadbeater, M. Henini, H. O. Hughes, G. Hill and M. A. Pate, “Optical investigation of charge accumulation and bistability in an asymmetric double barrier resonant tunneling heterostructure”, Surf. Sci. 228, 373 (1990)
I. Bar-Joseph, T. K. Woodward, D. S. Chemla, D. Sivco, and A. Y. Cho, “Differential absorption spectroscopy of charge distributions in double-barrier tunnel structures”, Phys. Rev. B41, 3264 (1990)
H. Yoshimura, G. E. Bauer and H. Sakaki, “Carrier-induced shift and broadening of optical spectra in an AlXGa1-XAs/GaAs quantum well with a gate electrode”, Phys. Rev. B38 10791 (1988)
J. N. Schulman, “Ga1-XAl As-Ga1-yAlyAs-GaAs double-barrier structures”, J. Appl. Phys. 60, 3954 (1986)
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Sakaki, H., Yoshimura, H., Tsuchiya, M., Matsusue, T. (1991). Transversal Time and Charge Accumulation in Double-Barrier Resonant Tunneling Structures. In: Chang, L.L., Mendez, E.E., Tejedor, C. (eds) Resonant Tunneling in Semiconductors. NATO ASI Series, vol 277. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3846-2_29
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DOI: https://doi.org/10.1007/978-1-4615-3846-2_29
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