Abstract
Application of a magnetic field perpendicular to the quantum well of a resonant tunneling structure further quantizes the motion of electrons, thus allowing detailed spectroscopy of localized levels and of scattering processes in which they are involved. We first analyse the effect of Landau level broadening on resonant magnetotunneling characteristics. We then show that our theory of scattering-assisted tunneling may easily be extended to describe the magneto-transport in the off-resonant regime. We discuss the transition between 3D and 2D injection of electrons due to spacer thickness, and in the case of 2D injection where large magneto-oscillations have been observed, we present simulations in excellent agreement with experiments.
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Chevoir, F., Vinter, B. (1991). Resonant and Scattering-Assisted Magnetotunneling. In: Chang, L.L., Mendez, E.E., Tejedor, C. (eds) Resonant Tunneling in Semiconductors. NATO ASI Series, vol 277. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3846-2_24
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DOI: https://doi.org/10.1007/978-1-4615-3846-2_24
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