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Scattering Processes, Coherent and Incoherent Transport in Resonant Tunneling Structures

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Resonant Tunneling in Semiconductors

Part of the book series: NATO ASI Series ((NSSB,volume 277))

Abstract

We describe a conceptually simple theory of dc transport of electrons across a resonant tunneling structure. Scattering processes are included by using Fermi’s golden rule between the unperturbed states of the tunneling structure. The theory describes in a natural way how the scattering processes broaden the transmission resonance from the purely coherent transmission resonance; it also shows how the scattering processes determine the valley current. The theory has no adjustable parameters. We apply it to several situations and demonstrate in particular that the valley current calculated agrees well with observation both with regard to structure in the valley current and peak-to-valley ratios.

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Vinter, B., Chevoir, F. (1991). Scattering Processes, Coherent and Incoherent Transport in Resonant Tunneling Structures. In: Chang, L.L., Mendez, E.E., Tejedor, C. (eds) Resonant Tunneling in Semiconductors. NATO ASI Series, vol 277. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3846-2_20

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  • DOI: https://doi.org/10.1007/978-1-4615-3846-2_20

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-6716-1

  • Online ISBN: 978-1-4615-3846-2

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