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Electron-Phonon Interaction in Resonant Tunneling Heterostructure

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Resonant Tunneling in Semiconductors

Part of the book series: NATO ASI Series ((NSSB,volume 277))

Abstract

The effect of electron-phonon interaction in the transport properties of double barrier heterostructures is studied. The non-equilibrium Keldysh formalism is used to obtain the electrical current as a function of the applied bias under the presence of an optical phonon. The results are compared with experimental measurements.

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References

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Author information

Authors and Affiliations

  1. Instituto de Física, Universidade Federal Fluminense, Outeiro de São João Batista, 20420, Niterói, RJ, Brasil

    E. V. Anda

  2. Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid, Cantoblanco, 28049, Madrid, Spain

    F. Flores

Authors
  1. E. V. Anda
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  2. F. Flores
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Editor information

Editors and Affiliations

  1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA

    L. L. Chang  & E. E. Mendez  & 

  2. Universidad Autonoma de Madrid, Madrid, Spain

    C. Tejedor

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© 1991 Springer Science+Business Media New York

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Anda, E.V., Flores, F. (1991). Electron-Phonon Interaction in Resonant Tunneling Heterostructure. In: Chang, L.L., Mendez, E.E., Tejedor, C. (eds) Resonant Tunneling in Semiconductors. NATO ASI Series, vol 277. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3846-2_19

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  • DOI: https://doi.org/10.1007/978-1-4615-3846-2_19

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-6716-1

  • Online ISBN: 978-1-4615-3846-2

  • eBook Packages: Springer Book Archive

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