Abstract
The peculiar differences in tunneling characteristics measured from a number of asymmetric GaAs/ AlAs double-barrier resonant-tunneling structures under two opposite biases have systematically been studied. It is found that LO phonon-assisted tunneling in two opposite directions may possibly be controlled by the different dwell times of traversing electrons in the well as the structure is positively or negatively biased.
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© 1991 Springer Science+Business Media New York
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Zheng, H., Yang, F. (1991). Studies on Tunneling Characteristics on Asymmetric GaAs/AlAs Double-Barrier Structures. In: Chang, L.L., Mendez, E.E., Tejedor, C. (eds) Resonant Tunneling in Semiconductors. NATO ASI Series, vol 277. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3846-2_17
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DOI: https://doi.org/10.1007/978-1-4615-3846-2_17
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