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A Perspective of Resonant Tunneling

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Resonant Tunneling in Semiconductors

Part of the book series: NATO ASI Series ((NSSB,volume 277))

Abstract

We provide a perspective of the development of resonant tunneling over the last two decades. The work starts with a consideration of different semiconductor materials, proceeds to discuss the effects of band structure and electron dynamics, continues to describe systems of multiple barriers and low dimensional electrons, and ends with a summary of device applications. The emphasis is on major experimental observations, which serve as cornerstones of this field.

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Authors and Affiliations

  1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York, 10598, USA

    L. L. Chang

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  1. L. L. Chang
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  1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA

    L. L. Chang  & E. E. Mendez  & 

  2. Universidad Autonoma de Madrid, Madrid, Spain

    C. Tejedor

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Chang, L.L. (1991). A Perspective of Resonant Tunneling. In: Chang, L.L., Mendez, E.E., Tejedor, C. (eds) Resonant Tunneling in Semiconductors. NATO ASI Series, vol 277. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3846-2_1

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  • DOI: https://doi.org/10.1007/978-1-4615-3846-2_1

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