Abstract
This chapter describes the basic operating principles of the key semiconductor devices that lie at the heart of modern electronics.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
A. S. Grove, Physics and Technology of Semiconductor Devices, Wiley, New York (1967).
S. M. Sze, Physics of Semiconductor Devices, 2nd Ed., Wiley, New York (1981).
S. M. Sze, Semiconductor Devices: Physics and Technology, Wiley, New York (1985).
B. G. Streetman, Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, New Jersey (1980).
E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd Ed, Clarendon Press, Oxford (1988).
P. Ashburn, Design and Realization of Bipolar Transistors, Wiley, New York (1988).
P. H. Ladbrooke, MMIC Design: GaAsFETs and HEMTs, Artech House, Boston and London (1989), pp. 69–83.
K. Heime, InGaAs Field-Effect Transistors, Research Studies Press, Somerset, England (1988).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1991 Springer Science+Business Media New York
About this chapter
Cite this chapter
Wallis, R.H. (1991). Key Electrical Devices. In: Miller, L.S., Mullin, J.B. (eds) Electronic Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3818-9_6
Download citation
DOI: https://doi.org/10.1007/978-1-4615-3818-9_6
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-6703-1
Online ISBN: 978-1-4615-3818-9
eBook Packages: Springer Book Archive