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Electronic Materials pp 225–251Cite as

Microstructural and Compositional Characterization of Thin-Film Semiconductor Materials by Transmission Electron Microscopy (TEM)

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Abstract

The field of semiconductor devices has been transformed in recent years by the availability of preparative techniques capable of routinely providing materials in thin-film form and of extremely high purity. With advances in the field of metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and metalorganic molecular beam epitaxy (MOMBE) has come the need to characterize materials using methods with higher sensitivities and much improved spacial resolution. It is no exaggeration to say that single atoms need to be seen and their influences recorded. These requirements have placed additional demands on characterization techniques. Table 1 summarizes a selection of the important techniques currently available for the chemical, structural, optical, and electrical characterization of epitaxial materials. Most of these can only be used to determine macroscopic (average) properties. Some, such as secondary ion mass spectrometry (SIMS) and the electrical techniques, can be combined with profiling to probe properties as a function of depth normal to the epitaxial layers, but at distances 10 ≲nm (100Å) resolution limits begin to be approached.

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  1. Solid State Chemistry Group, Chemistry Department, UMIST, P.O. Box 88, Manchester, M60 1QD, UK

    A. C. Wright & J. O. Williams

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  1. Coventry Polytechnic, Coventry, England

    L. S. Miller

  2. Electronic Materials Consultancy, Malvern, England

    J. B. Mullin

  3. Royal Signals and Radar Establishment, Malvern, England

    J. B. Mullin

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Wright, A.C., Williams, J.O. (1991). Microstructural and Compositional Characterization of Thin-Film Semiconductor Materials by Transmission Electron Microscopy (TEM). In: Miller, L.S., Mullin, J.B. (eds) Electronic Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3818-9_16

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