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Ballistic Electronic Transport in Semiconductor Structures

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Recent Progress in Many-Body Theories
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Abstract

A brief discussion is presented on aspects of ballistic transport in small structures exploiting the high mobility electron gas in GaAs-AlGaAs heterojunctions. In this regime of transport the conductance is quantised and has value where i is the number of one dimensional subbands. Lifting the spin degeneracy with magnetic field, either transverse or parallel, results in removal of the factor of 2 in the quantised conductance. It is shown that a variety of quantum interference phenomena can be observed with such structures, including Aharonov-Bohm oscillations in singly connected structures.

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© 1990 Springer Science+Business Media New York

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Pepper, M. (1990). Ballistic Electronic Transport in Semiconductor Structures. In: Avishai, Y. (eds) Recent Progress in Many-Body Theories. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3798-4_21

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  • DOI: https://doi.org/10.1007/978-1-4615-3798-4_21

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-6693-5

  • Online ISBN: 978-1-4615-3798-4

  • eBook Packages: Springer Book Archive

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