Abstract
A brief discussion is presented on aspects of ballistic transport in small structures exploiting the high mobility electron gas in GaAs-AlGaAs heterojunctions. In this regime of transport the conductance is quantised and has value where i is the number of one dimensional subbands. Lifting the spin degeneracy with magnetic field, either transverse or parallel, results in removal of the factor of 2 in the quantised conductance. It is shown that a variety of quantum interference phenomena can be observed with such structures, including Aharonov-Bohm oscillations in singly connected structures.
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Pepper, M. (1990). Ballistic Electronic Transport in Semiconductor Structures. In: Avishai, Y. (eds) Recent Progress in Many-Body Theories. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3798-4_21
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DOI: https://doi.org/10.1007/978-1-4615-3798-4_21
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