Abstract
To develop a technique which can quantitatively simulate rf glow discharges is very important because these discharges are used for a wide variety of thin film fabrication processes and etching processes. For example, rf glow discharges in SiH4 are used for plasma CVD of amorphous silicon for solar cells. However, the properties of glow discharges have not yet been well understood.
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© 1990 Springer Science+Business Media New York
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Date, A., Kitamori, K., Tagashira, H. (1990). A Self-Consistent Monte Carlo Modeling of RF Non-Equilibrium Plasma. In: Capitelli, M., Bardsley, J.N. (eds) Nonequilibrium Processes in Partially Ionized Gases. NATO ASI Series, vol 220. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3780-9_32
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DOI: https://doi.org/10.1007/978-1-4615-3780-9_32
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