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Molecular Beam Epitaxy of Semiconductor, Metal, and Dielectric Films

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Growth of Crystals

Part of the book series: Growth of Crystals ((GROC,volume 16))

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Abstract

The most important achievement of molecular beam epitaxy (MBE) is the ability to prepare so-called modulated semiconducting structures (MSS), a special case of which are superlattices (SL) which consist of layers with a thickness of one or several monolayers of various materials. The first SL were prepared in the GaxAl1-xAs—GaAs system with a small misfit of the lattice constants f. A substantially broader dass of MSS and SL can be created by conjugation of crystals with a large f. In this case, defect-free strained SL are formed in which the adjoining layers are found in a pseudomorphic state. The basic principles and technical equipment of MBE are reviewed in [1–4]. In the present article, the physicochemical aspects of MBE as applied to growth of semiconducting, metal, and dielectric films are examined. Also, the effects of reflection intensity oscillation during reflection high-energy electron diffraction (RHEED), the methods of automatic ellipsometry (AE) and modulated beams which allow precision control of adsorption—desorption processes, superstructure rearrangements, kinetics of surface reactions, and mechanisms of MSS growth are discussed.

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  1. S. I. Stenin
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  2. A. I. Toropov
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Editors and Affiliations

  1. Institute of Crystallography, Academy of Sciences of the USSR, Moscow, Russia

    Kh. S. Bagdasarov  & É. L. Lube  & 

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Stenin, S.I., Toropov, A.I. (1991). Molecular Beam Epitaxy of Semiconductor, Metal, and Dielectric Films. In: Bagdasarov, K.S., Lube, É.L. (eds) Growth of Crystals. Growth of Crystals, vol 16. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3662-8_8

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  • DOI: https://doi.org/10.1007/978-1-4615-3662-8_8

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