Abstract
Multilayered structures prepared by gas-phase epitaxy (GPE) are used in the fabrication of devices and microcircuits based on gallium arsenide. Control of the doping level is one of the commercially important problems in materials science. Since the introduction of gas-phase epitaxy of GaAs, many experimental results on the problem of doping group II, IV, and VI elements, as well as transition metals, have been published. Brief reviews of these efforts can be found in [1–3]. Significantly less attention has been paid to the mechanism of the process. The following tendencies in modelling of the doping process can be identified: description of the equilibrium and trapping of impurity limited by external diffusion, surface diffusion, and adsorption (including the shift of the Fermi level on the surface). A brief review of the model is given in [3, 4]. At present, surface kinetics is considered the principal step limiting crystallization and doping during GPE of GaAs. In this case, the rate should depend on the surface structure. Analysis of this function allows information on the micromechanisms of the process to be obtained.
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Lavrent’eva, L.G. (1991). Kinetics of Gallium Arsenide Doping in Gas-Phase Epitaxy. In: Bagdasarov, K.S., Lube, É.L. (eds) Growth of Crystals. Growth of Crystals, vol 16. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3662-8_10
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DOI: https://doi.org/10.1007/978-1-4615-3662-8_10
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