Skip to main content

Photostimulated Epitaxy

  • Chapter
Growth of Crystals

Part of the book series: Growth of Crystals ((GROC,volume 17))

Abstract

Photostimulated epitaxy is one of the promising methods for preparing films of group III–V, II–VI, and IV–VI compounds in a hydrogen atmosphere. The method consists essentially of irradiation of the charge, the substrate surface, and the gaseous volume with focused radiation from a xenon lamp with a wavelength between 0.2–1.2 μm [1].

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 74.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature Cited

  1. S. N. Maksimovskii, Yu. I. Gorina, G. A. Kalyuzhnaya, and B. M. Vul, “Film growth method,” Pat. No. 4115163 (USA).

    Google Scholar 

  2. V. P. Sasorov, “’Uran’ equipment for radiative high-temperature heating,” Élektrovak. Tekh., No. 42, 87–90 (1967).

    Google Scholar 

  3. T. N. Rokhlin, Gas Discharge Light Sources [in Russian], Énergiya, Moscow (1966).

    Google Scholar 

  4. Yu. A. Gel’man, Yu. N. Lyubitov, V. I. Mikhailov, et aL, “Effect of adsorbed carbon on condensation of a NaCl molecular beam on Ir and Pt,” Kristallografiya, 21, No. 6, 1175–1177 (1976).

    CAS  Google Scholar 

  5. V. I. Mikhailov, V. F. Vinogradov, Yu. A. Gel’man, et aL, “Exchange of energy and mass between a gold molecular beam and a sodium chloride crystal surface,” Zh. Fiz. Khim., 51, No. 7, 1653–1656 (1977).

    CAS  Google Scholar 

  6. S. N. Maksimovskii, É. L. Nolle, S. A. Botnev, et al, “Effect of purity and perfection of the surface on photoemission of activated GaAs,” Fiz Tverd Tela, 23, No. 9, 2752–2758 (1981).

    Google Scholar 

  7. E. Bauser, M. Frik, K. S. Loechner, et. aL, “Substrate orientation and surface morphology of GaAs liquid phase epitaxial layers,” j. Crysl Growth, 27, 148–153 (1974).

    CAS  Google Scholar 

  8. R. Laudise and R. Parker, Growth of Singjie Crystal, Prentice-Hall, Englewood Cliffs, New Jersey (1970).

    Google Scholar 

  9. N. N. Loiko, S. N. Maksimovskii, E. L. Nolle, et aL, “Dependence of carbon concentration on the surface of GaAs epitaxial films on substrate disorientation value relative to the crystallographic facet,” Fiz Tverd Tela, 24, No. 9, 2595–2598 (1982).

    CAS  Google Scholar 

  10. S. N. Maksimovskii, E. L. Nolle, and S. A. Botnev, “Light annealing of semiconductor surfaces,” Kratk. Soobsheh Fiz, No. 5, 26–29 (1984).

    Google Scholar 

  11. J. A. Van Vechten and A. Compaan, “Plasma annealing state of semiconductors,” Solid-State Commun., 39, 867–875 (1981).

    Article  Google Scholar 

  12. C. Goodman, Crystal Growth, Plenum Press, New York (1974).

    Google Scholar 

  13. A. S. Averyushkin, O. V. Aleksandrov, K. V. Kiseleva, et aL, “X-ray structural and luminescence properties of lead selenide epitaxial films,” Izv. Akad. Nauk SSSR, Neorg Mater., 15, No. 3, 380–385 (1979).

    CAS  Google Scholar 

  14. S. N. Maksimovskii, F. Galeski, I. P. Revokatova, et aL, “Radiative recombination and separation of a second phase in epitaxial films of lead telluride,” Elektron. Tekh., Ser. 6, Mater., No. 1, 75–81 (1980).

    Google Scholar 

  15. S. N. Maximovsky, I. P. Revokatova, and M. A. Selezneva, “CdTe epitaxial films,” Rev. Phys. AppL, 12, 1178–1182 (1977).

    Article  Google Scholar 

  16. Yu. D. Chistyakov, “Use of electromagnetic radiation in gas-phase processes of semiconductor technology,” in: Obzory Elektron. Tekh., Ser. 2, Semiconducting Devices [in Russian], Tsentr. Nauchn. Issled. Inst, felektronika, Moscow (1976), No. 5 (369), pp. 3–83.

    Google Scholar 

  17. J. Ready, Effects of High-Power Laser Radiation [Russian translation], Mir, Moscow (1974).

    Google Scholar 

  18. G. M. Guro, G. A. Kalyuzhnaya, T. S. Mamedov, and A. A. Shelepin, “Activation of narrow-band semiconductor epitaxial film growth by light irradiation,’ Kratk. Soobshch. Fiz., No. 11, 27–32 (1978).

    Google Scholar 

  19. Ya. I. Gerasimov, Course in Physical Chemistry [in Russian], Vol. 2, Khimiya, Moscow (1966).

    Google Scholar 

  20. S. N. Maximovsky, I. P. Revokatova, and M. A. Selezneva, “Photostimulated epitaxy of II-VI, IV-VI layers,”J. Cryst Growth, 52,141–145 (1981).

    Article  Google Scholar 

  21. A. D. Britov, S. N. Maksimovskii, N. A. Penin, et al, “Retuned heterolasers on PbSe,” Kvantovaya Élektron., 3, No. 11, 2513–2515 (1976).

    CAS  Google Scholar 

  22. A. D. Britov, S. M. Karavaev, S. N. Maksimovskii, et al, “Retuning of laser diode pulsed modes based on lead-tin chalcogenides,” Kvantovaya Élektron, 4, No. 9, 1999–2001 (1977).

    CAS  Google Scholar 

  23. L. N. Kurbatov, A. D. Britov, S. N. Maksimovskii, et al, “Retuned far-IR heterolaser with 46.2 μm wavelength,” Pis’ma Zh. Éksp. Teor. Fiz., 37, No. 9, 422–424 (1983).

    CAS  Google Scholar 

  24. L. N. Kurbatov, A. D. Britov, and A. I. Korchevskii, “High-resolution IR laser spectroscopy of supercooled heavy element hexafluorides,” Kvantovaya Étiehron., 8, No. 7, 1573–1576 (1981).

    Google Scholar 

  25. L. N. Kurbatov, A. D. Britov, S. M. Karavaev, et aL, “Far-IR magnetoplasma injection lasers (λ = 50 чm) based on the heterostructures (PbSe)0.8(SnTe)0.2-PbSe0.32Te0.68,” Kratk Soobshch. Fiz., No. 7, 10–12 (1986).

    Google Scholar 

  26. L. N. Kurbatov, S. M. Karavaev, A. D. Britov, et aL, “Generation of long-wave IR radiation in narrow-band semiconductors in the region of the magnetoplasma transparency window,” Pis’ma Zh Éksp. Teor. Fiz, 43Z, No. 4, 169–171 (1986).

    CAS  Google Scholar 

Download references

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1991 Consultants Bureau, New York

About this chapter

Cite this chapter

Maksimovskii, S.N. (1991). Photostimulated Epitaxy. In: Givargizov, E.I., Grinberg, S.A. (eds) Growth of Crystals. Growth of Crystals, vol 17. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3660-4_3

Download citation

  • DOI: https://doi.org/10.1007/978-1-4615-3660-4_3

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-6629-4

  • Online ISBN: 978-1-4615-3660-4

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics