Skip to main content

MOSFET Characteristics

  • Chapter
Circuit Design for CMOS VLSI
  • 840 Accesses

Abstract

Current flow through a metal-oxide-semiconductor field-effect transistor (MOSFET) is understood by analyzing the response of the charge carriers in the semiconductor to applied electric fields. This chapter summarizes the physics of MOS transistors needed to understand circuit models.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. L.A. Akers and J.J. Sanchez, “Threshold Voltage Models of Short, Narrow and Small Geometry MOSFET’s: A Review”, Solid-State Electronics, vol. 25, pp. 621–641, July, 1982.

    Article  Google Scholar 

  2. P. Antognetti and G. Massobrio (eds.), Semiconductor Device Modelling with SPICE, McGraw-Hill, New York, 1988.

    Google Scholar 

  3. J.R. Brews, W. Fichtner, E.H. Nicollian and S.M. Sze, “Generalized guide for MOSFET Miniaturization”, IEEE Electron Device Letters, vol. EDL-1, pp. 2–4, 1980.

    Article  Google Scholar 

  4. J.Y. Chen, CMOS Devices and Technology for VLSI, Prentice-Hall, Englewood Cliffs, NJ, 1990.

    Google Scholar 

  5. Y-Z. Chen and T-W. Tang, “Computer Simulation of Hot-Carrier Effects in Asymmetric LDD and LDS MOSFET Devices”, IEEE Trans. Electron Devices, vol. 36, pp. 2492–2498, November, 1989.

    Article  Google Scholar 

  6. J.Y. Chi and R.P. Holstrom, “Constant voltage scaling of FET’s for high frequency and high power applications”, Solid-State Electronics, vol. 26, pp. 667–670, July, 1983.

    Article  Google Scholar 

  7. P.E. Cottrell, R.R. Troutman, and T Ning, “Hot-Electron Emission in N-Channel IGFET’s”, IEEE Trans. Electron Devices, vol. ED-26, pp. 520–532, April, 1979.

    Article  Google Scholar 

  8. M.J. Deen and Z.P. Zuo, “Edge Effects in Narrow-Width MOS-FET’s”, IEEE Trans. Electron Devices, vol. 38, pp. 1815–1819, August, 1991/

    Article  Google Scholar 

  9. R.H. Dennard, et. al, “Design of ion-implanted MOSFETs with very small physical dimensions”, IEEE J. Solid-State Circuits, vol. SC-9, pp. 256–268, October, 1974.

    Article  Google Scholar 

  10. D. A. Divekar, FET Modeling for Circuit Simulation, Springer Science+Business Media New York, Boston, 1988.

    Book  Google Scholar 

  11. D.K. Ferry, L. A. Akers, and E.W. Greeneich, Ultra Large Scale Integrated Microelectronics, Prentice-Hall, Englewood Cliffs, NJ, 1988.

    Google Scholar 

  12. G. Krieger, R. Sikora, P.P. Ceuvas, and M.N. Misheloff, “Moderately Doped NMOS (M-LDD)-Hot Electron and Current Drive Optimization”, IEEE Trans. Electron Devices, vol. 38, pp. 121–127, January, 1991.

    Article  Google Scholar 

  13. R.S. Muller and T.I Kamins, Device Electronics for Integrated Circuits, 2nd ed., John Wiley & Sons, New York, 1986.

    Google Scholar 

  14. E.H. Nicollian and J.R. Brews, MOS Physics and Technology, Wiley-Interscience, New York, 1982.

    Google Scholar 

  15. B.J. Sheu, D.L. Scharfetter, P-K. Ko, M-C Jeng, “BSIM: Berkeley Short-Channel IGFET Model for MOS Transistors”, IEEE J. Solid-State Circuits, vol. SC-22, No. 4, pp. 558–565, August, 1987.

    Article  Google Scholar 

  16. S. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley & Sons, New York, 1981.

    Google Scholar 

  17. K-Y. Toh, P-K. Ko, and R.G. Meyer, “An Engineering Model for Short-Channel MOS Devices”, IEEE J. Solid-State Circuits, vol. 23, No. 4, pp. 950–957, August, 1988.

    Article  Google Scholar 

  18. Y. P. Tsividis, Operation and Modeling of The MOS Transistor, McGraw-Hill, New York, 1987.

    Google Scholar 

  19. J. P. Uyemura, Fundamentals of MOS Digital Integrated Circuits, Addison-Wesley, Reading, MA, 1988.

    Google Scholar 

  20. E.S. Yang, Microelectronic Devices, McGraw-Hill, New York, 1988.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 1992 Springer Science+Business Media New York

About this chapter

Cite this chapter

Uyemura, J.P. (1992). MOSFET Characteristics. In: Circuit Design for CMOS VLSI. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3620-8_2

Download citation

  • DOI: https://doi.org/10.1007/978-1-4615-3620-8_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-6609-6

  • Online ISBN: 978-1-4615-3620-8

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics