Abstract
The following chapter highlights recent results in the area of ZnSe growth by conventional molecular beam epitaxy (MBE) which, in the author’s opinion, have significantly advanced both our understanding of the material itself as well as the MBE technology as it pertains to ZnSe epitaxial growth. The term, conventional MBE, is taken to mean epitaxial growth in which the constituent elements, in this case Zn and Se, are derived from Knudsen-style effusion sources containing solid-element material. The review is concerned solely with recent advances in the field of conventional MBE growth of ZnSe and does not include discussion on technologically related approaches to ZnSe growth such as metal–organic molecular beam epitaxy (MOMBE), for example.
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Park, R.M. (1992). ZnSe growth by conventional molecular beam epitaxy: a review of recent progress. In: Ruda, H.E. (eds) Widegap II–VI Compounds for Opto-electronic Applications. Electronic Materials Series, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3486-0_4
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DOI: https://doi.org/10.1007/978-1-4615-3486-0_4
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