Implanted widegap II–VI materials for electro-optic applications and electron-beam-pumped devices

Abstract

Ion implantation into II–VI compound semiconductor materials is thought to be useful for p-n junction formation, especially for realizing minority-carrier injection light-emitting diodes (laser diodes). However, there are few studies on implantation into widegap II–VI materials [1,2] compared with those into Si and III–V compound materials. In addition, in II–VI materials there are self-compensation problems resulting from lattice defects induced by ion implantation. In order to obtain high-performance widegap II–VI compound devices by ion implantation, it is necessary to understand defect structures and behaviours of defects and impurities. In this chapter, several approaches for ion implantation into widegap II–VI materials, especially ZnS, ZnSe CdS, are reviewed from the points of view of understanding defects and emission centres, and realizing p-n junction formation.