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Self- and impurity diffusion processes in widegap II–VI materials

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Widegap II–VI Compounds for Opto-electronic Applications

Part of the book series: Electronic Materials Series ((EMAT,volume 1))

Abstract

A knowledge of the manner and ease with which atoms can migrate in a II–VI crystal lattice is of both fundamental and technological importance. At the fundamental level the diffusion process may involve non-defect or defect mechanisms: experimental diffusivities can help to identify the type of mechanism and underpin theoretical understanding of atom movements and defects. Diffusion is important in both material and device technology through control of non-stoichiometry, impurity doping and compositional interdiffusion (via gradients in alloy composition). The introduction during the past decade of epitaxial growth techniques and their use in the fabrication of low-dimensional structures has revealed a need for diffusion studies at much lower temperatures and in much smaller spatial regions compared with bulk materials (i.e. material ⩾1 µm in extent). It is easily seen for example that in a period of 103s (e.g. growth of a multiple quantum well (MQW)) diffusivities must be ⩽ 10-18 cm2 s-1 if diffusional spread should not exceed ~ 10 Å. Over a period of a year diffusivities must be ⩽ 10-22 cm2 s-1 to contain any spread to < 10 Å.

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  1. Department of Metallurgy and Materials Science and Department of Electrical Engineering, University of Toronto, Ontario, Canada

    Harry E. Ruda (Assistant Professor) (Assistant Professor)

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Shaw, D. (1992). Self- and impurity diffusion processes in widegap II–VI materials. In: Ruda, H.E. (eds) Widegap II–VI Compounds for Opto-electronic Applications. Electronic Materials Series, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3486-0_10

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  • DOI: https://doi.org/10.1007/978-1-4615-3486-0_10

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