Abstract
The nonlinear dynamics of charge transport parallel to the layers of a modulation-doped semiconductor heterostructure is studied theoretically. For sufficiently large dc bias limit cycle oscillations of the current in the 100 GH z range, and bistability and hysteretic switching transitions between periodic attractors and fixed points attractors are predicted. We present a detailed investigation of complex bifurcation scenarios displaying sub critical Hopf bifurcations, homoclinic bifurcations of an unstable limit cycle, cyclic folds of limit cycles by condensation of paths, ‘canards’ and ‘phantom ducks’. In a double heterostructure transient chaos associated with a chaotic repeller is found.
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Döttling, R., Schöll, E., Reznik, D. (1992). Global Bifurcations, Nonlinear and Chaotic Spatio-Temporal Dynamics in Semiconductor Heterostructures. In: Bountis, T. (eds) Chaotic Dynamics. NATO ASI Series, vol 298. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3464-8_20
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DOI: https://doi.org/10.1007/978-1-4615-3464-8_20
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