Abstract
Intersubband scattering is of fundamental importance for the development of devices based on semiconductor heterostructures. In particular, the corresponding relaxation times determine the sensitivity of infrared detectors based on intersubband absorption, they are of relevance in the discussion of infrared laser emission from intersubband transitions, and they affect the speed of infrared modulators and high frequency devices.
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© 1992 Springer Science+Business Media New York
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Plödereder, U., Dahinten, T., Seilmeier, A., Weimann, G. (1992). Intersubband Relaxation in Modulation Doped Quantum Well Structures. In: Rosencher, E., Vinter, B., Levine, B. (eds) Intersubband Transitions in Quantum Wells. NATO ASI Series, vol 288. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3346-7_29
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DOI: https://doi.org/10.1007/978-1-4615-3346-7_29
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