Abstract
In this paper, we study the internal photoemission response of asymmetrical metal-Si-metal heterostructures. The photoresponse of these structures results from the combination of both hole and electron photoemission from one metallic “quantum well” above the trapezoidal potential barrier formed by the intermediate Si layer towards the second metallic film. Due to the asymmetry of the potential barrier between the wells (when metals with different Schottky barrier heights on Si are used), the phototoemission response can be strongly modified when a bias is applied between the two metallic electrodes. Using the Pt/Si/ErSi1.7 system, we show that the cutoff wavelength is shifted from 1.4 μm to above 5 μm and that the quantum efficiency is increased up to 5% at 1.2 μm wavelength when a positive bias of a few hundred mV is applied to the front Pt electrode. We will discuss the principles and behavior of this system, which give new insight in the physics of hot carriers transport in Si and briefly discuss the perspective for the improvement of these new “tunable internal photoemission sensors”.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
F.D. Shepherd and A.C. Yang, IEDM Tech. Dig., p. 310 (1973).
W.F. Kosonocky, F.V. Shallcross, T.S. Villani, and J.V. Groppe, UTE Trans. Electron Devices, ED-22, 1564 (1985).
B.Y. Tsaur, C.K. Chen, and B.A. Nechay, IEPP Electron Device Lett., 11, 415 (1990).
T.L. Lin and J. Maserjian, Appl. Phys. Lett. 57, 1422 (1990).
P.A. Badoz and J.Y. Duboz, French Patent n° 90 03668 (1990), US Patent pending.
F.Arnaud d’Avitaya, P.A. Badoz, J.A. Chroboczek, J.Y. Duboz, A. Perio, and J. Pierre, Thin Solid Films, 184, 283–293 (1990).
J.Y. Duboz, P.A. Badoz, F. Arnaud d’Avitaya, and E. Rosencher, Phys. Rev. B 55, 10607 (1989).
S. Delage, P.A. Badoz, E. Rosencher and F. Arnaud d’Avitaya, Electron. Lett. 22, 207 (1986).
E.D. Palik, “Handbook of optical constants of solids” (Academic Press 1985), pp. 333.
J.Y. Duboz, P.A. Badoz, F. Arnaud d’Avitaya, and J.A. Chroboczek, Appl. Phys. Lett. 55, 84 (1989).
I. Sagnes, G. Vincent and P.A. Badoz, unpublished results.
R.H. Fowler, Phys. Rev. 38, 45 (1931).
R.M.A. Azzam and N.M. Bashara, Ellipsometry and polarized light (North Holland, 1977), Chap. 4.
G. Bremond, These d’Etat, Universite de Lyon I, France (1988) unpublished.
L. Reggiani, Hot Electron Transport in Semiconductors, vol. 58, (Springer Verlag, 1985), Chap 2 and 8.
N. Ashcroft and N. Mermin, Solid State Physics, (CBS Publishing, 1976), Chap. 26.
R. Castagne, G. Gautherin, and P. Hesto, Final Report of CEA contract n° N5201/000/00N1A, (1989).
S.M. Sze, Physics of semiconductor devices, (John Wiley, 1981), Chap. 8.
E.H. Nicollian and J.R. Brews, RCS Physics and Technology, (John Wiley, 1982) Chap. 11.
J.J. Quinn, Phys. Rev. 126, 1453 (1962).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer Science+Business Media New York
About this chapter
Cite this chapter
Badoz, P.A., Pahun, L., Campidelli, Y., d’Avitaya, F.A. (1992). Internal Photoemission of Asymmetrical Pt/Si/ErSi1.7 Heterostructures with Tunable Cutoff Wavelength. In: Rosencher, E., Vinter, B., Levine, B. (eds) Intersubband Transitions in Quantum Wells. NATO ASI Series, vol 288. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3346-7_22
Download citation
DOI: https://doi.org/10.1007/978-1-4615-3346-7_22
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-6475-7
Online ISBN: 978-1-4615-3346-7
eBook Packages: Springer Book Archive