Abstract
Diamond technology is a major area of worldwide semiconductor research. It has been said that the current status of diamond semiconductor technology is similar to that of silicon technology in 1960. Most of the research on diamond is in high quality film production (e.g., purity, and single crystalline versus polycrystalline). A few groups are concentrating on the development of diamond electronic devices. In this endeavor, both p-type and n-type diamond films have been produced. The p-type diamond has excellent properties while the ntype diamond is very high resistance. A primitive p-n junction has been demonstrated. Several groups have demonstrated Schottky diodes including the high bandgap semiconductor group at the University of Missouri-Columbia.
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Prelas, M.A. (1992). Diamond Photovoltaic Cells as a First Wall Material and Energy Conversion System for Inertial Confinement Fusion. In: Miley, G.H., Hora, H. (eds) Laser Interaction and Related Plasma Phenomena. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3324-5_30
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DOI: https://doi.org/10.1007/978-1-4615-3324-5_30
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